Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
نویسندگان
چکیده
Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska Cesta 9, 84104 Bratislava, Slovakia Advanced Materials and Device Analysis Group, Institute for Microelectronics, Vienna University of Technology, Gusshausstr. 27-29, 1040 Vienna, Austria Alcatel-Thales III–V Lab, Route de Nozay, 91460 Marcoussis, France Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria
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Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation
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